DM2G200SH6N Specs and Replacement
Type Designator: DM2G200SH6N
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 695 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: MODULE DM2G200SH6N Substitution - IGBT ⓘ Cross-Reference Search
DM2G200SH6N datasheet
dm2g200sh6n.pdf
D WTM D WTM DM2G200SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drive... See More ⇒
dm2g200sh6a.pdf
D WTM D WTM DM2G200SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto... See More ⇒
dm2g200sh12ae.pdf
Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G200SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modul... See More ⇒
dm2g200sh12a.pdf
Preliminary D WTM D WTM Mar. 2008 DM2G200SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical syste... See More ⇒
Specs: ISL9V3040D3S , ISL9V3040S3S , GT50N322A , DM2G150SH6N , DM2G150SH6NE , DM2G200SH12A , DM2G200SH12AE , DM2G200SH6A , IXGH60N60 , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 .
Keywords - DM2G200SH6N transistor spec
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