HYG15P120A1K1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG15P120A1K1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
HYG15P120A1K1 Datasheet (PDF)
hyg15p120h1k1.pdf
HYG15P120H1K1IGBT ModuleF Features Low VCEsattrench IGBT Low switching losses 10us short circuit capability Fast & soft reverse recovery FRD Maximum junction temperature 175 Temperature sense included Industry standard package with solderingpins for PCB mountingTypical Applications Inverter for motor drive AC and DC servo drive ampli
Otros transistores... DM2G200SH12AE , DM2G200SH6A , DM2G200SH6N , DM2G300SH12A , DM2G300SH6A , DM2G300SH6NE , DM2G400SH6A , DM2G400SH6N , RJP30H1DPD , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , IFS100B12N3E4_B31 .
History: IRG7RC07SD | IXGH30N60B | IRG4BC30UD | NGTB50N120FL2WG | BSM30GD60DLC_E3224 | SKM195GAR063DN | IRG7PH35UD1M
History: IRG7RC07SD | IXGH30N60B | IRG4BC30UD | NGTB50N120FL2WG | BSM30GD60DLC_E3224 | SKM195GAR063DN | IRG7PH35UD1M
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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