IFS100B12N3E4_B31 Todos los transistores

 

IFS100B12N3E4_B31 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IFS100B12N3E4_B31
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 515 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Paquete / Cubierta: MODULE
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IFS100B12N3E4_B31 Datasheet (PDF)

 0.1. Size:662K  infineon
 ifs100b12n3e4 b39.pdf pdf_icon

IFS100B12N3E4_B31

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC

 0.2. Size:893K  infineon
 ifs100b12n3e4 b31.pdf pdf_icon

IFS100B12N3E4_B31

/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun

 1.1. Size:696K  infineon
 ifs100b12n3e4-b31.pdf pdf_icon

IFS100B12N3E4_B31

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp

MOSTRAR MÁS

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History: IRG7PH28UD1 | APT40GP90BG

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