IFS100B12N3E4_B31 Datasheet and Replacement
Type Designator: IFS100B12N3E4_B31
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 515 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Package: MODULE
IFS100B12N3E4_B31 substitution
IFS100B12N3E4_B31 Datasheet (PDF)
ifs100b12n3e4 b39.pdf

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B39IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and currentsense shuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC
ifs100b12n3e4 b31.pdf

/ Technical InformationIGBT-IFS100B12N3E4_B31IGBT-modulesMIPAQbase / IGBT4 and HE diodeand MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshun
ifs100b12n3e4-b31.pdf

Technische Information / Technical InformationIGBT-ModuleIFS100B12N3E4_B31IGBT-modulesMIPAQbase Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode undStrommesswiderstandMIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current senseshuntVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTyp
Datasheet: HYG15P120A1K1 , HYG15P120A1K2 , HYG15P120B1K1 , HYG15P120H1K1 , HYG30P120H1K1 , HYG40P120H1S , HYG75B120C1S , HYG75P120D1S , SGT50T65FD1PN , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , IXYH30N120C3D1 .
History: IXGT28N120BD1
Keywords - IFS100B12N3E4_B31 transistor datasheet
IFS100B12N3E4_B31 cross reference
IFS100B12N3E4_B31 equivalent finder
IFS100B12N3E4_B31 lookup
IFS100B12N3E4_B31 substitution
IFS100B12N3E4_B31 replacement
History: IXGT28N120BD1



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