IXYH30N120C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYH30N120C3D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 416 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 140 pF
Qgⓘ - Carga total de la puerta, typ: 69 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXYH30N120C3D1 - IGBT
IXYH30N120C3D1 Datasheet (PDF)
ixyh30n120c3d1.pdf
1200V XPTTM IGBT VCES = 1200VIXYH30N120C3D1GenX3TM w/ Diode IC110 = 30AVCE(sat) 3.3Vtfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = Collect
ixyp30n120c3 ixyh30n120c3.pdf
1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2
ixyh30n120c3.pdf
N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyh30n170c.pdf
Advance Technical InformationVCES = 1700VHigh Voltage IXYH30N170CIC110 = 30AXPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1700 VGVCGR TJ = 25C to 175C, RGE = 1M 1700 VC TabEVGES Continuous 20 VVGEM Transient 30 VG =
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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