IXYH30N120C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXYH30N120C3D1 Datasheet (PDF)

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1200V XPTTM IGBT VCES = 1200VIXYH30N120C3D1GenX3TM w/ Diode IC110 = 30AVCE(sat) 3.3Vtfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum Rati

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1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2

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N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

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Advance Technical InformationVCES = 1700VHigh Voltage IXYH30N170CIC110 = 30AXPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1700 VGVCGR TJ = 25C to 175C, RGE = 1M 1700 VC TabEVGES Continuous 20 VVGEM Transient 30 VG =

Otros transistores... IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , GT45F122 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 .