All IGBT. IXYH30N120C3D1 Datasheet

 

IXYH30N120C3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYH30N120C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 66 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Qgⓘ - Total Gate Charge, typ: 69 nC
   Package: TO247

 IXYH30N120C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYH30N120C3D1 Datasheet (PDF)

 ..1. Size:1279K  ixys
 ixyh30n120c3d1.pdf

IXYH30N120C3D1 IXYH30N120C3D1

1200V XPTTM IGBT VCES = 1200VIXYH30N120C3D1GenX3TM w/ Diode IC110 = 30AVCE(sat) 3.3Vtfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = Collect

 2.1. Size:188K  ixys
 ixyp30n120c3 ixyh30n120c3.pdf

IXYH30N120C3D1 IXYH30N120C3D1

1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2

 2.2. Size:428K  ixys
 ixyh30n120c3.pdf

IXYH30N120C3D1 IXYH30N120C3D1

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

 6.1. Size:226K  ixys
 ixyh30n170c.pdf

IXYH30N120C3D1 IXYH30N120C3D1

Advance Technical InformationVCES = 1700VHigh Voltage IXYH30N170CIC110 = 30AXPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1700 VGVCGR TJ = 25C to 175C, RGE = 1M 1700 VC TabEVGES Continuous 20 VVGEM Transient 30 VG =

Datasheet: IFS100B12N3E4_B31 , IFS100B12N3E4_B39 , IFS150B12N3E4_B31 , IFS75B12N3E4_B31 , IFS75B12N3E4_B32 , IXYH20N120C3D1 , IXYH20N120C3 , IXYH30N120C3 , YGW40N65F1 , IXA4I1200UC , IXA4IF1200TC , IXA4IF1200UC , IXA70I1200NA , IXYP20N120C3 , IXYP30N120C3 , IXYR100N120C3 , IXYH40N120B3 .

 

 
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