IXYH50N120C3D1 Todos los transistores

 

IXYH50N120C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYH50N120C3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 62 nS
   Coesⓘ - Capacitancia de salida, typ: 230 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXYH50N120C3D1 Datasheet (PDF)

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IXYH50N120C3D1

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3D1GenX3TM w/ Diode IC100 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVG

 2.1. Size:210K  ixys
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IXYH50N120C3D1

1200V XPTTM IGBT VCES = 1200VIXYH50N120C3GenX3TM IC110 = 50A VCE(sat) 3.5V tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capability) 10

 7.1. Size:251K  ixys
 ixyh50n65c3h1.pdf pdf_icon

IXYH50N120C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYH50N65C3H1GenX3TM w/ Sonic IC110 = 50ADiode VCE(sat) 2.10V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1

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 ixyh50n65c3.pdf pdf_icon

IXYH50N120C3D1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA50N65C3GenX3TM IC110 = 50AIXYP50N65C3 VCE(sat) 2.10V IXYH50N65C3tfi(typ) = 26nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 (IXYA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXYP)VCES TJ = 25C to 175

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FGD2736G3-F085 | SKM50GB12V | MMG75W120XT6TC | APTGF75DDA120T | MG17100S-BN4MM | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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