SG12N06P Todos los transistores

 ..1. Size:191K  sirectifier
 sg12n06p.pdf

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

 7.1. Size:101K  sirectifier
 sg12n06dt.pdf

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 7.2. Size:101K  sirectifier
 sg12n06t.pdf

SG12N06T, SG12N06DT Discrete IGBTs Dimensions TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 E G=Gate, C=Collector, D 3.55 3.65 0.140 0.144 C(TAB) C E=Emitter,TAB=Collector G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0

 7.3. Size:191K  sirectifier
 sg12n06dp.pdf

SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M

 7.4. Size:481K  cn wuxi unigroup
 tsg12n06at.pdf

TSG12N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)