HGTP1N120BN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP1N120BN
Tipo de transistor: IGBT
Código de marcado: 1N120BN
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 60 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 5.3 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.1(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 14 nC
Paquete / Cubierta: TO220AB
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HGTP1N120BN Datasheet (PDF)
hgtd1n120bns hgtp1n120bn.pdf
HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150
hgtd1n120bns hgtp1n120bn.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hgtp1n120bnd hgt1s1n120bnds hgt1s1n120bnds9a.pdf
HGTP1N120BND, HGT1S1N120BNDSData Sheet January 2000 File Number 4650.25.3A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oCThe HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC
hgtp1n120cnd hgt1s1n120cnds.pdf
HGTP1N120CND, HGT1S1N120CNDSData Sheet December 20016.2A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 6.2A, 1200V, TC = 25oCThe HGTP1N120CND and the HGT1S1N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical EOFF . . . . . . . . . . . . . . . . . . 200J at TJ = 150oCmembers of the MOS
Otros transistores... HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , HGTP14N40F3VL , GT30G124 , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R .
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