HGTP1N120BN PDF and Equivalents Search

 

HGTP1N120BN Specs and Replacement


   Type Designator: HGTP1N120BN
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 5.3 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   tr ⓘ - Rise Time, typ: 11 nS
   Package: TO220AB
 

 HGTP1N120BN Substitution

   - IGBT ⓘ Cross-Reference Search

 

HGTP1N120BN datasheet

 ..1. Size:92K  fairchild semi
 hgtd1n120bns hgtp1n120bn.pdf pdf_icon

HGTP1N120BN

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150... See More ⇒

 ..2. Size:217K  onsemi
 hgtd1n120bns hgtp1n120bn.pdf pdf_icon

HGTP1N120BN

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:75K  1
 hgtp1n120bnd hgt1s1n120bnds hgt1s1n120bnds9a.pdf pdf_icon

HGTP1N120BN

HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oC The HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC ... See More ⇒

 5.1. Size:351K  1
 hgtd1n120cns hgtp1n120cn.pdf pdf_icon

HGTP1N120BN

... See More ⇒

SHOW MORE

Specs: HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , HGTP14N40F3VL , SGT60N60FD1P7 , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R .

Keywords - HGTP1N120BN transistor spec

 HGTP1N120BN cross reference
 HGTP1N120BN equivalent finder
 HGTP1N120BN lookup
 HGTP1N120BN substitution
 HGTP1N120BN replacement

 

 
Back to Top

 


 
.