VS-GT100LA120UX Todos los transistores

 

VS-GT100LA120UX - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GT100LA120UX
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 92 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.36 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 259 nS
   Paquete / Cubierta: SOT-227
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VS-GT100LA120UX Datasheet (PDF)

 0.1. Size:172K  vishay
vs-gt100la120ux.pdf pdf_icon

VS-GT100LA120UX

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 6.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT100LA120UX

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 6.2. Size:184K  vishay
vs-gt100tp120n.pdf pdf_icon

VS-GT100LA120UX

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

 6.3. Size:172K  vishay
vs-gt100na120ux.pdf pdf_icon

VS-GT100LA120UX

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: 1MBI75U4F-120L-50 | SGTP50V60SD2PF | VS-40MT120UHTAPBF | SG12N06DT | GT20J311 | AFGY120T65SPD-B4 | CM400DY-24A

 

 
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