VS-GT100NA120UX Todos los transistores

 

VS-GT100NA120UX - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GT100NA120UX
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 92 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.36 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 259 nS
   Qgⓘ - Carga total de la puerta, typ: 400 nC
   Paquete / Cubierta: SOT-227
     - Selección de transistores por parámetros

 

VS-GT100NA120UX Datasheet (PDF)

 0.1. Size:172K  vishay
vs-gt100na120ux.pdf pdf_icon

VS-GT100NA120UX

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 6.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT100NA120UX

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 6.2. Size:184K  vishay
vs-gt100tp120n.pdf pdf_icon

VS-GT100NA120UX

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

 6.3. Size:172K  vishay
vs-gt100la120ux.pdf pdf_icon

VS-GT100NA120UX

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

Otros transistores... SG50N06DT , SG50N06S , SG50N06T , SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , FGH75T65UPD , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N .

 

 
Back to Top

 


VS-GT100NA120UX
  VS-GT100NA120UX
  VS-GT100NA120UX
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213

 


 
.