VS-GT140DA60U Todos los transistores

 ..1. Size:299K  vishay
 vs-gt140da60u.pdf

VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 C SOT-227 Fully isolated package Very low internal i

 8.1. Size:181K  vishay
 vs-gt100tp60n.pdf

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 8.2. Size:153K  vishay
 vs-gt105na120ux.pdf

VS-GT105NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

 8.3. Size:154K  vishay
 vs-gt105la120ux.pdf

VS-GT105LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

 8.4. Size:184K  vishay
 vs-gt100tp120n.pdf

VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

 8.5. Size:172K  vishay
 vs-gt100la120ux.pdf

VS-GT100LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 8.6. Size:172K  vishay
 vs-gt100na120ux.pdf

VS-GT100NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

 8.7. Size:274K  vishay
 vs-gt175da120u.pdf

VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 C SOT-227 Fully isolated package Speed 4 kHz to 30