All IGBT. VS-GT140DA60U Datasheet

 

VS-GT140DA60U Datasheet and Replacement


   Type Designator: VS-GT140DA60U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 370 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.72 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: SOT-227
      - IGBT Cross-Reference

 

VS-GT140DA60U Datasheet (PDF)

 ..1. Size:299K  vishay
vs-gt140da60u.pdf pdf_icon

VS-GT140DA60U

VS-GT140DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 140 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 CSOT-227 Fully isolated package Very low internal i

 8.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT140DA60U

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 8.2. Size:153K  vishay
vs-gt105na120ux.pdf pdf_icon

VS-GT140DA60U

VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

 8.3. Size:154K  vishay
vs-gt105la120ux.pdf pdf_icon

VS-GT140DA60U

VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

Datasheet: SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , FGH30S130P , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N .

History: IXGH35N120B | IXXK100N60C3H1 | RJP60V0DPM | GT10G101 | MG300N1US1 | AOKS40B65H2AL | SL40T65FL1

Keywords - VS-GT140DA60U transistor datasheet

 VS-GT140DA60U cross reference
 VS-GT140DA60U equivalent finder
 VS-GT140DA60U lookup
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 VS-GT140DA60U replacement

 

 
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