HGTP1N120BND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTP1N120BND, HGT1S1N120BNDSData Sheet January 2000 File Number 4650.25.3A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oCThe HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC

HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTP1N120CND, HGT1S1N120CNDSData Sheet December 20016.2A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 6.2A, 1200V, TC = 25oCThe HGTP1N120CND and the HGT1S1N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical EOFF . . . . . . . . . . . . . . . . . . 200J at TJ = 150oCmembers of the MOS