HGTP1N120BND Specs and Replacement
Type Designator: HGTP1N120BND
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 5.3 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 11 nS
Package: TO220
HGTP1N120BND Substitution
HGTP1N120BND datasheet
hgtp1n120bnd hgt1s1n120bnds hgt1s1n120bnds9a.pdf
HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oC The HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC ... See More ⇒
hgtd1n120bns hgtp1n120bn.pdf
HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150... See More ⇒
hgtd1n120bns hgtp1n120bn.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , HGTP14N40F3VL , HGTP1N120BN , IKW75N60T , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN .
Keywords - HGTP1N120BND transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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