DL2G100SH6A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DL2G100SH6A
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 950 pF
Qgⓘ - Carga total de la puerta, typ: 320 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DL2G100SH6A - IGBT
DL2G100SH6A Datasheet (PDF)
dl2g100sh6a.pdf
D WTMD WTMDL2G100SH6ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power NPT & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters
dl2g100sh6n.pdf
Discontinuance (Aug. 31, 2013) DL2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and o
Otros transistores... VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , IHW20N120R2 , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A .
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