DL2G100SH6A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DL2G100SH6A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 950 pF
Encapsulados: MODULE
Búsqueda de reemplazo de DL2G100SH6A IGBT
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DL2G100SH6A datasheet
dl2g100sh6a.pdf
D WTM D WTM DL2G100SH6A DAWIN Electronics DAWIN Electronics Apr. 2008 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters
dl2g100sh6n.pdf
Discontinuance (Aug. 31, 2013) DL2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and o
Otros transistores... VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , GT30J122 , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A .
History: HMG40N60T | TT040U065FB | MPGC50N65E | MPBW40N120EH | VS-GT50TP60N
History: HMG40N60T | TT040U065FB | MPGC50N65E | MPBW40N120EH | VS-GT50TP60N
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