DL2G75SH6N Todos los transistores

 

DL2G75SH6N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DL2G75SH6N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 650 pF

Encapsulados: MODULE

 Búsqueda de reemplazo de DL2G75SH6N IGBT

- Selección ⓘ de transistores por parámetros

 

DL2G75SH6N datasheet

 ..1. Size:687K  dawin
dl2g75sh6n.pdf pdf_icon

DL2G75SH6N

Discontinuance (Aug. 31, 2013) DL2G75SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and othe

 5.1. Size:630K  dawin
dl2g75sh6a.pdf pdf_icon

DL2G75SH6N

D WTM D WTM DL2G75SH6A DAWIN Electronics DAWIN Electronics Apr. 2008 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters,

 6.1. Size:634K  dawin
dl2g75sh12a.pdf pdf_icon

DL2G75SH6N

D WTM D WTM DL2G75SH12A DAWIN Electronics DAWIN Electronics Apr. 2008 High Power SPT+ & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverter

Otros transistores... VS-GT75NP120N , DL2G100SH6A , DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , GT30F132 , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet

 

 

↑ Back to Top
.