DM2G100SH12A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DM2G100SH12A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 800 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 520 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
DM2G100SH12A Datasheet (PDF)
dm2g100sh12a.pdf

PreliminaryDM2G100SH12AApr. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh
dm2g100sh6n.pdf

DM2G100SH6NJan. 2012High Power Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are sign
dm2g100sh6a.pdf

DM2G100SH6AJuly. 2010High Power NPT & Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses ar
dm2g150sh12a.pdf

PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
Otros transistores... DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , IRGP4063 , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N .
History: VS-GT300FD060N | IRG4PC30FPBF | IXGH30N60C3D1 | NGTB40N120FL2WG | NGTB30N60FWG | 6MBI100VA-060-50 | CM200DY-12NF
History: VS-GT300FD060N | IRG4PC30FPBF | IXGH30N60C3D1 | NGTB40N120FL2WG | NGTB30N60FWG | 6MBI100VA-060-50 | CM200DY-12NF



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