DM2G100SH12A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DM2G100SH12A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 800 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 520 pF
Encapsulados: MODULE
Búsqueda de reemplazo de DM2G100SH12A IGBT
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DM2G100SH12A datasheet
dm2g100sh12a.pdf
Preliminary DM2G100SH12A Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh
dm2g100sh6n.pdf
DM2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign
dm2g100sh6a.pdf
DM2G100SH6A July. 2010 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar
dm2g150sh12a.pdf
Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
Otros transistores... DL2G100SH6N , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , CRG40T65AK5HD , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , DM2G50SH12A , DM2G50SH6A , DM2G50SH6N .
History: MPBQ120N65GSF | AOKS40B60D1 | AOK75B65H1
History: MPBQ120N65GSF | AOKS40B60D1 | AOK75B65H1
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