DM2G100SH12A Specs and Replacement
Type Designator: DM2G100SH12A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 520 pF
Package: MODULE DM2G100SH12A Substitution - IGBTⓘ Cross-Reference Search
DM2G100SH12A datasheet
dm2g100sh12a.pdf
Preliminary DM2G100SH12A Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications wh... See More ⇒
dm2g100sh6n.pdf
DM2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are sign... See More ⇒
dm2g100sh6a.pdf
DM2G100SH6A July. 2010 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses ar... See More ⇒
dm2g150sh12a.pdf
Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power ... See More ⇒
Specs: DL2G100SH6N, DL2G50SH12A, DL2G50SH6A, DL2G50SH6N, DL2G75SH12A, DL2G75SH6A, DL2G75SH6N, DM1GL75SH12A, CRG40T65AK5HD, DM2G100SH6A, DM2G100SH6N, DM2G150SH12A, DM2G150SH12AE, DM2G150SH6A, DM2G50SH12A, DM2G50SH6A, DM2G50SH6N
Keywords - DM2G100SH12A transistor spec
DM2G100SH12A cross reference
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History: GT20G101 | DM2G100SH6N | GT15Q301 | GT20D101Y | GT20J301 | GT15J102 | GT15N101
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