HGTP20N35G3VL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTP20N35G3VL,HGT1S20N35G3VL,HGT1S20N35G3VLS20A, 350V N-Channel,December 2001Logic Level, Voltage Clamping IGBTsFeatures PackagesJEDEC TO-220AB Logic Level Gate DriveCOLLECTOREMITTER Internal Voltage ClampGATECOLLECTOR ESD Gate Protection(FLANGE) TJ = 175oC Ignition Energy CapableJEDEC TO-262AADescriptionEMITTERCOLLECTORThis N-Channel I

HGTP20N35G3VL,S E M I C O N D U C T O R HGT1S20N35G3VL,HGT1S20N35G3VLS20A, 350V N-Channel,April 1995Logic Level, Voltage Clamping IGBTsFeatures PackagesJEDEC TO-220AB Logic Level Gate DriveEMITTER COLLECTOR Internal Voltage ClampGATECOLLECTOR ESD Gate Protection(FLANGE) TJ = 175oC Ignition Energy CapableJEDEC TO-262AADescriptionEMITTERCOLLE

HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HGTG20N60A4, HGTP20N60A4Data Sheet April 2013 File NumberFeatures600 V SMPS IGBT 40 A, 600 V @ TC = 110CThe HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 Alow on-state conduction loss of a bipolar transistor. This Typical Fall Time............55ns at TJ = 1

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6