All IGBT. HGTP20N35G3VL Datasheet

 

HGTP20N35G3VL IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP20N35G3VL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 375

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 10

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 30000

Package: TO220AB

HGTP20N35G3VL Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTP20N35G3VL IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP20N35G3VL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 375

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 10

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 30000

Package: TO220AB

HGTP20N35G3VL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP20N35G3VL Datasheet (PDF)

6.1. hgtp20n3.pdf Size:120K _harris_semi

HGTP20N35G3VL
HGTP20N35G3VL

HGTP20N35G3VL,S E M I C O N D U C T O R HGT1S20N35G3VL,HGT1S20N35G3VLS20A, 350V N-Channel,April 1995Logic Level, Voltage Clamping IGBTsFeatures PackagesJEDEC TO-220AB Logic Level Gate DriveEMITTER COLLECTOR Internal Voltage ClampGATECOLLECTOR ESD Gate Protection(FLANGE) TJ = 175oC Ignition Energy CapableJEDEC TO-262AADescriptionEMITTERCOLLE

7.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTP20N35G3VL
HGTP20N35G3VL

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

7.2. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

HGTP20N35G3VL
HGTP20N35G3VL

HGTG20N60A4, HGTP20N60A4Data Sheet December 2001600V, SMPS Series N-Channel IGBTs FeaturesThe HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20Ahigh voltage switching devices combining the best features 200kHz Operation at 390V, 12Aof MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capabilityhigh input impedance of a

 7.3. hgtp20n6.pdf Size:172K _harris_semi

HGTP20N35G3VL
HGTP20N35G3VL

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6

7.4. hgtp20n60c3r.pdf Size:112K _harris_semi

HGTP20N35G3VL
HGTP20N35G3VL

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

Datasheet: HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL , HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , IRG4PC50U , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND .

 

 
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