HGTP20N35G3VL PDF and Equivalents Search

 ..1. Size:212K  1
 hgtp20n35g3vl hgt1s20n35g3vl hgt1s20n35g3vls.pdf

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, December 2001 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB Logic Level Gate Drive COLLECTOR EMITTER Internal Voltage Clamp GATE COLLECTOR ESD Gate Protection (FLANGE) TJ = 175oC Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLECTOR This N-Channel I... See More ⇒

 6.1. Size:120K  harris semi
 hgtp20n3.pdf

HGTP20N35G3VL, S E M I C O N D U C T O R HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, April 1995 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB Logic Level Gate Drive EMITTER COLLECTOR Internal Voltage Clamp GATE COLLECTOR ESD Gate Protection (FLANGE) TJ = 175oC Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLE... See More ⇒

 7.1. Size:197K  1
 hgt1s20n60b3s hgtp20n60b3 hgtg20n60b3.pdf

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oC HGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capability switching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .... See More ⇒

 7.2. Size:172K  1
 hgtp20n60b3 hgtg20n60b3.pdf

HGTP20N60B3, S E M I C O N D U C T O R HGTG20N60B3 February 1996 40A, 600V, UFS Series N-Channel IGBT JEDEC TO-220AB Features Package EMITTER COLLECTOR 40A, 600V at TC = +25oC GATE Square Switching SOA Capability COLLECTOR (FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction Loss JEDEC STYLE TO-247 Description EMITTER The HGTP20N6... See More ⇒

 7.3. Size:203K  1
 hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs hgt1s20n60c3rs9a.pdf

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 7.4. Size:691K  1
 hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3 hgt1s20n60c3s.pdf

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 7.5. Size:112K  1
 hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒

 7.6. Size:136K  fairchild semi
 hgtg20n60a4 hgtp20n60a4.pdf

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a... See More ⇒

 7.7. Size:140K  fairchild semi
 hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .... See More ⇒

 7.8. Size:260K  onsemi
 hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.9. Size:180K  onsemi
 hgtg20n60a4 hgtp20n60a4.pdf

HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 File Number Features 600 V SMPS IGBT 40 A, 600 V @ TC = 110 C The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the Low Saturation Voltage VCE(sat) = 1.8 V @ IC = 20 A low on-state conduction loss of a bipolar transistor. This Typical Fall Time............55ns at TJ = 1... See More ⇒

 7.10. Size:112K  harris semi
 hgtp20n60c3r.pdf

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒

 7.11. Size:172K  harris semi
 hgtp20n6.pdf

HGTP20N60B3, S E M I C O N D U C T O R HGTG20N60B3 February 1996 40A, 600V, UFS Series N-Channel IGBT JEDEC TO-220AB Features Package EMITTER COLLECTOR 40A, 600V at TC = +25oC GATE Square Switching SOA Capability COLLECTOR (FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction Loss JEDEC STYLE TO-247 Description EMITTER The HGTP20N6... See More ⇒