SHD724502 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SHD724502
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Encapsulados: TO-258
Búsqueda de reemplazo de SHD724502 IGBT
- Selección ⓘ de transistores por parámetros
SHD724502 datasheet
shd724502.pdf
SHD724502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1004, REV. A Formerly part number SHDG1025 1200 VOLT, 35 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Bre
shd724602.pdf
SENSITRON SHD724402 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 994, REV. B Formerly part number SHDG1024 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown
shd724402.pdf
SENSITRON SHD724402 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 994, REV. B Formerly part number SHDG1024 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA WITH FAST REVERSE RECOVERY DIODE ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown
shd724401.pdf
SENSITRON SHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - V IC
Otros transistores... DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F , SHD724401 , SHD724402 , FGA25N120ANTD , SHD724602 , SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N .
History: TA49052 | SRE60N065FSU | YGW40N65F1A1
History: TA49052 | SRE60N065FSU | YGW40N65F1A1
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555 | a950 transistor | k2611 | c1740 transistor