VS-GB100TH120U Todos los transistores

 

VS-GB100TH120U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB100TH120U

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1136 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃

trⓘ - Tiempo de subida, typ: 64 nS

Coesⓘ - Capacitancia de salida, typ: 760 pF

Encapsulados: MODULE

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VS-GB100TH120U datasheet

 ..1. Size:158K  vishay
vs-gb100th120u.pdf pdf_icon

VS-GB100TH120U

VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Double INT-A-P

 1.1. Size:153K  vishay
vs-gb100th120n.pdf pdf_icon

VS-GB100TH120U

VS-GB100TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A FEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base

 5.1. Size:88K  vishay
vs-gb100tp120u.pdf pdf_icon

VS-GB100TH120U

VS-GB100TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop

 5.2. Size:193K  vishay
vs-gb100ts60npbf.pdf pdf_icon

VS-GB100TH120U

VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

Otros transistores... SHD739601 , SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N , IHW20N120R3 , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N .

History: STGW75H65DFB2-4 | SHD724602

 

 

 


History: STGW75H65DFB2-4 | SHD724602

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