All IGBT. VS-GB100TH120U Datasheet

 

VS-GB100TH120U Datasheet and Replacement


   Type Designator: VS-GB100TH120U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 64 nS
   Coesⓘ - Output Capacitance, typ: 760 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-GB100TH120U Datasheet (PDF)

 ..1. Size:158K  vishay
vs-gb100th120u.pdf pdf_icon

VS-GB100TH120U

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P

 1.1. Size:153K  vishay
vs-gb100th120n.pdf pdf_icon

VS-GB100TH120U

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base

 5.1. Size:88K  vishay
vs-gb100tp120u.pdf pdf_icon

VS-GB100TH120U

VS-GB100TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop

 5.2. Size:193K  vishay
vs-gb100ts60npbf.pdf pdf_icon

VS-GB100TH120U

VS-GB100TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: VS-GB300TH120N | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | STGB19NC60KDT4 | BUK856-400IZ | 1MB08D-120

Keywords - VS-GB100TH120U transistor datasheet

 VS-GB100TH120U cross reference
 VS-GB100TH120U equivalent finder
 VS-GB100TH120U lookup
 VS-GB100TH120U substitution
 VS-GB100TH120U replacement

 

 
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