VS-GB200TH120U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VS-GB200TH120U datasheet

..1. Size:155K vishay
vs-gb200th120u.pdf pdf_icon

VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance case Double INT-A-PAK Fast and soft reverse recovery

1.1. Size:155K vishay
vs-gb200th120n.pdf pdf_icon

VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES Low VCE(on) SPT+ IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK Iso

5.1. Size:194K vishay
vs-gb200ts60npbf.pdf pdf_icon

VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge (Ultrafast Speed IGBT), 209 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

6.1. Size:156K vishay
vs-gb200lh120n.pdf pdf_icon

VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW