All IGBT. VS-GB200TH120U Datasheet

 

VS-GB200TH120U Datasheet and Replacement


   Type Designator: VS-GB200TH120U
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1316 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 1510 pF
   Package: MODULE
 

 VS-GB200TH120U substitution

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VS-GB200TH120U Datasheet (PDF)

 ..1. Size:155K  vishay
vs-gb200th120u.pdf pdf_icon

VS-GB200TH120U

VS-GB200TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 200 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery

 1.1. Size:155K  vishay
vs-gb200th120n.pdf pdf_icon

VS-GB200TH120U

VS-GB200TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 200 AFEATURES Low VCE(on) SPT+ IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-PAK Iso

 5.1. Size:194K  vishay
vs-gb200ts60npbf.pdf pdf_icon

VS-GB200TH120U

VS-GB200TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge (Ultrafast Speed IGBT), 209 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras

 6.1. Size:156K  vishay
vs-gb200lh120n.pdf pdf_icon

VS-GB200TH120U

VS-GB200LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 200 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - VS-GB200TH120U transistor datasheet

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