VS-GA250SA60S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GA250SA60S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 462 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 250 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.33 V @25℃
trⓘ - Tiempo de subida, typ: 42 nS
Coesⓘ - Capacitancia de salida, typ: 1040 pF
Encapsulados: SOT-227
Búsqueda de reemplazo de VS-GA250SA60S IGBT
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VS-GA250SA60S datasheet
vs-ga250sa60s.pdf
VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A FEATURES Standard optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outline SOT-227 Designed and qualified for i
vs-ga200hs60s1pbf.pdf
VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A FEATURES Gen 4 IGBT technology Standard optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization for definitions of compl
vs-ga200sa60up.pdf
VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi
vs-ga200th60s.pdf
VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance case Double INT-A-PAK Fast and soft reverse recovery antiparalle
Otros transistores... VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , CRG60T60AK3HD , VS-GB300AH120N , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N .
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