VS-GA250SA60S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GA250SA60S
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 462
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 250
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.33
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 42
Емкость коллектора типовая (Cc), pf: 1040
Общий заряд затвора (Qg), typ, nC: 770
Тип корпуса: SOT-227
Аналог (замена) для VS-GA250SA60S
VS-GA250SA60S Datasheet (PDF)
vs-ga250sa60s.pdf
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VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i
vs-ga200hs60s1pbf.pdf
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VS-GA200HS60S1PbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge IGBT(Standard Speed IGBT), 200 AFEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compl
vs-ga200sa60up.pdf
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VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi
vs-ga200th60s.pdf
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VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![VS-GA250SA60S](https://alltransistors.com/images/us.png)
![VS-GA250SA60S](https://alltransistors.com/images/es.png)
![VS-GA250SA60S](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ