VS-GB400AH120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB400AH120N
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 4000 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de VS-GB400AH120N IGBT
VS-GB400AH120N Datasheet (PDF)
vs-gb400ah120n.pdf
VS-GB400AH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 400 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir
vs-gb400ah120u.pdf
VS-GB400AH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 400 AFEATURES 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB
vs-gb400th120n.pdf
VS-GB400TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V and 400 AFEATURES High short circuit capability, self limiting 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct
vs-gb400th120u.pdf
VS-GB400TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 400 AFEATURES 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB
Otros transistores... VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S , VS-GB300AH120N , VS-GB300LH120N , VS-GB300NH120N , VS-GB300TH120N , VS-GB300TH120U , IKW30N60H3 , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , VS-GB50YF120N .
History: AP20GT60P-HF
History: AP20GT60P-HF
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