VS-GB50YF120N Todos los transistores

 

VS-GB50YF120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GB50YF120N
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 180 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 44 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.49 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 56 nS
   Qgⓘ - Carga total de la puerta, typ: 400 nC
   Paquete / Cubierta: MODULE

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VS-GB50YF120N Datasheet (PDF)

 ..1. Size:221K  vishay
vs-gb50yf120n.pdf

VS-GB50YF120N
VS-GB50YF120N

VS-GB50YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 50 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 7.1. Size:120K  vishay
vs-gb50lp120n.pdf

VS-GB50YF120N
VS-GB50YF120N

VS-GB50LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w

 7.2. Size:172K  vishay
vs-gb50la120ux.pdf

VS-GB50YF120N
VS-GB50YF120N

VS-GB50LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78

 7.3. Size:173K  vishay
vs-gb50na120ux.pdf

VS-GB50YF120N
VS-GB50YF120N

VS-GB50NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E7

 7.4. Size:88K  vishay
vs-gb50tp120n.pdf

VS-GB50YF120N
VS-GB50YF120N

VS-GB50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 50 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isol

Otros transistores... VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , TGAN20N135FD , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U .

 

 
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