VS-GB50YF120N Todos los transistores

 

VS-GB50YF120N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB50YF120N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 180 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 44 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.49 V @25℃

trⓘ - Tiempo de subida, typ: 56 nS

Encapsulados: MODULE

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VS-GB50YF120N datasheet

 ..1. Size:221K  vishay
vs-gb50yf120n.pdf pdf_icon

VS-GB50YF120N

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of

 7.1. Size:120K  vishay
vs-gb50lp120n.pdf pdf_icon

VS-GB50YF120N

VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w

 7.2. Size:172K  vishay
vs-gb50la120ux.pdf pdf_icon

VS-GB50YF120N

VS-GB50LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78

 7.3. Size:173K  vishay
vs-gb50na120ux.pdf pdf_icon

VS-GB50YF120N

VS-GB50NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E7

Otros transistores... VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , IRG4PC50U , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U .

History: SKM145GAX123D

 

 

 


History: SKM145GAX123D

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