VS-GB50YF120N PDF and Equivalents Search

 

VS-GB50YF120N Specs and Replacement

Type Designator: VS-GB50YF120N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 180 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 44 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.49 V @25℃

tr ⓘ - Rise Time, typ: 56 nS

Package: MODULE

 VS-GB50YF120N Substitution

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VS-GB50YF120N datasheet

 ..1. Size:221K  vishay
vs-gb50yf120n.pdf pdf_icon

VS-GB50YF120N

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of... See More ⇒

 7.1. Size:120K  vishay
vs-gb50lp120n.pdf pdf_icon

VS-GB50YF120N

VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology VCE(on) w... See More ⇒

 7.2. Size:172K  vishay
vs-gb50la120ux.pdf pdf_icon

VS-GB50YF120N

VS-GB50LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78... See More ⇒

 7.3. Size:173K  vishay
vs-gb50na120ux.pdf pdf_icon

VS-GB50YF120N

VS-GB50NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E7... See More ⇒

Specs: VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , IRG4PC50U , VS-GB55LA120UX , VS-GB55NA120UX , VS-GB600AH120N , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U .

History: T0900EB45A | RJH60V2BDPP-M0 | SII150N12 | SGP23N60UF | SSM20G45EGH | TT030K065EQ

Keywords - VS-GB50YF120N transistor spec

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