VS-GB50YF120N IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GB50YF120N
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 44 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.49 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 56 nS
Qgⓘ - Total Gate Charge, typ: 400 nC
Package: MODULE
VS-GB50YF120N Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GB50YF120N Datasheet (PDF)
vs-gb50yf120n.pdf
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vs-gb50la120ux.pdf
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vs-gb50na120ux.pdf
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vs-gb50tp120n.pdf
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