VS-GB600AH120N Todos los transistores

 

VS-GB600AH120N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VS-GB600AH120N

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 3125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 62 nS

Coesⓘ - Capacitancia de salida, typ: 3100 pF

Encapsulados: MODULE

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VS-GB600AH120N datasheet

 ..1. Size:123K  vishay
vs-gb600ah120n.pdf pdf_icon

VS-GB600AH120N

VS-GB600AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 600 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir

 9.1. Size:145K  vishay
vs-gb55la120ux.pdf pdf_icon

VS-GB600AH120N

VS-GB55LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard

 9.2. Size:156K  vishay
vs-gb200lh120n.pdf pdf_icon

VS-GB600AH120N

VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW

 9.3. Size:221K  vishay
vs-gb75yf120n.pdf pdf_icon

VS-GB600AH120N

VS-GB75YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization for definitions of

Otros transistores... VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , IKW30N60H3 , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U .

 

 

 


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