All IGBT. VS-GB600AH120N Datasheet

 

VS-GB600AH120N IGBT. Datasheet pdf. Equivalent

Type Designator: VS-GB600AH120N

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 3125

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 600

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 62

Maximum Collector Capacity (Cc), pF: 3100

Package: MODULE

VS-GB600AH120N Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-GB600AH120N Datasheet (PDF)

1.1. vs-gb600ah120n.pdf Size:123K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB600AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 600 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Dir

5.1. vs-gb100th120n.pdf Size:153K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper base

5.2. vs-gb55na120ux.pdf Size:146K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB55NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standar

5.3. vs-gb100nh120n.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper

5.4. vs-gb400th120u.pdf Size:263K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A FEATURES • 10 µs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB

5.5. vs-gb400ah120n.pdf Size:150K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB400AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Dir

5.6. vs-gb70la60uf.pdf Size:150K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline •

5.7. vs-gb200th120u.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB200TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses • Rugged with ultrafast performance • Low inductance case Double INT-A-PAK • Fast and soft reverse recovery

5.8. vs-gb90da60u.pdf Size:305K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) SOT-227 • Industry st

5.9. vs-gb50yf120n.pdf Size:221K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB50YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market • UL approved file E78996 ECONO2 4PACK • Material categorization: for definitions of

5.10. vs-gb200nh120n.pdf Size:156K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

5.11. vs-gb100ts60npbf.pdf Size:193K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultras

5.12. vs-gb100tp120n.pdf Size:88K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Is

5.13. vs-gb100th120u.pdf Size:158K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES • NPT IGBT technology • 10 µs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-P

5.14. vs-gb50na120ux.pdf Size:173K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB50NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E7

5.15. vs-gb150ts60npbf.pdf Size:194K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB150TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultras

5.16. vs-gb100lh120n.pdf Size:156K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD

5.17. vs-gb200ts60npbf.pdf Size:194K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” (Ultrafast Speed IGBT), 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultras

5.18. vs-gb100lp120n.pdf Size:114K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

5.19. vs-gb90da120u.pdf Size:322K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB90DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) SOT-227 • Industry standard outline • UL appro

5.20. vs-gb50la120ux.pdf Size:172K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB50LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78

5.21. vs-gb200th120n.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES • Low VCE(on) SPT+ IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Iso

5.22. vs-gb75na60uf.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Higher switching frequency up to 150 kHz • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5

5.23. vs-gb50tp120n.pdf Size:88K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isol

5.24. vs-gb75tp120n.pdf Size:118K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT 2-in 1-Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x I • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Cop

5.25. vs-gb300lh120n.pdf Size:154K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB300LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Dou

5.26. vs-gb400ah120u.pdf Size:1056K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB400AH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • 10 µs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB

5.27. vs-gb50lp120n.pdf Size:120K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB50LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 50 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • VCE(on) w

5.28. vs-gb300ah120n.pdf Size:124K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB300AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Dir

5.29. vs-gb90sa120u.pdf Size:291K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline SOT-227 • UL approved file E78996 • Material categorization:

5.30. vs-gb300th120n.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB300TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bondin

5.31. vs-gb55la120ux.pdf Size:145K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB55LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Ultrafast IGBT), 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard

5.32. vs-gb300nh120n.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB300NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bon

5.33. vs-gb150th120n.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB150TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 150 A FEATURES • Low VCE(on) SPT + IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Is

5.34. vs-gb300th120u.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB300TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A FEATURES • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low switching losses • Rugged with ultrafast performance • Low inductance case Double INT-A-PAK • Fast and soft reverse recovery

5.35. vs-gb75yf120ut.pdf Size:224K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75YF120UT www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • UL approved file E78996 • Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912

5.36. vs-gb75tp120u.pdf Size:88K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA • Low inductance case • Fast and soft reverse recovery antiparalle

5.37. vs-gb150th120u.pdf Size:117K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB150TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A FEATURES • 10 µs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB

5.38. vs-gb200lh120n.pdf Size:156K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

5.39. vs-gb100tp120u.pdf Size:88K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB100TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Cop

5.40. vs-gb150lh120n.pdf Size:129K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB150LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

5.41. vs-gb75lp120n.pdf Size:119K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery anti-parallel FWD

5.42. vs-gb75la60uf.pdf Size:155K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Higher switching frequency up to 150 kHz • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier SOT-227 • Fully isolated package • Very low internal inductance ( 5 n

5.43. vs-gb400th120n.pdf Size:264K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct

5.44. vs-gb70na60uf.pdf Size:152K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB70NA60UF www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline •

5.45. vs-gb75yf120n.pdf Size:221K _igbt

VS-GB600AH120N
VS-GB600AH120N

VS-GB75YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market • UL approved file E78996 ECONO2 4PACK • Material categorization: for definitions of

Datasheet: VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N , VS-GB50NA120UX , VS-GB50TP120N , VS-GB50YF120N , VS-GB55LA120UX , VS-GB55NA120UX , GT15N101 , VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U .

 


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