VS-GB75LA60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GB75LA60UF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.31 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.4 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 44 nS
Qgⓘ - Carga total de la puerta, typ: 320 nC
Paquete / Cubierta: SOT-227
Búsqueda de reemplazo de VS-GB75LA60UF - IGBT
VS-GB75LA60UF Datasheet (PDF)
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vs-gb75yf120ut.pdf
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