VS-GB75LA60UF Todos los transistores

 

VS-GB75LA60UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GB75LA60UF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.31 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 44 nS
   Paquete / Cubierta: SOT-227
     - Selección de transistores por parámetros

 

VS-GB75LA60UF Datasheet (PDF)

 ..1. Size:155K  vishay
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VS-GB75LA60UF

VS-GB75LA60UFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifierSOT-227 Fully isolated package Very low internal inductance ( 5 n

 6.1. Size:119K  vishay
vs-gb75lp120n.pdf pdf_icon

VS-GB75LA60UF

VS-GB75LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery anti-parallel FWD

 7.1. Size:221K  vishay
vs-gb75yf120n.pdf pdf_icon

VS-GB75LA60UF

VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of

 7.2. Size:88K  vishay
vs-gb75tp120u.pdf pdf_icon

VS-GB75LA60UF

VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle

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