VS-GB75LA60UF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GB75LA60UF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 250
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 75
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.31
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 5.4
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 44
Общий заряд затвора (Qg), typ, nC: 320
Тип корпуса: SOT-227
Аналог (замена) для VS-GB75LA60UF
VS-GB75LA60UF Datasheet (PDF)
vs-gb75la60uf.pdf
VS-GB75LA60UFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifierSOT-227 Fully isolated package Very low internal inductance ( 5 n
vs-gb75lp120n.pdf
VS-GB75LP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery anti-parallel FWD
vs-gb75yf120n.pdf
VS-GB75YF120Nwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design Designed and qualified for industrial market UL approved file E78996 ECONO2 4PACK Material categorization: for definitions of
vs-gb75tp120u.pdf
VS-GB75TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparalle
vs-gb75na60uf.pdf
VS-GB75NA60UFwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 150 kHz Square RBSOA Low VCE(on) FRED Pt hyperfast rectifier Fully isolated packageSOT-227 Very low internal inductance ( 5
vs-gb75yf120ut.pdf
VS-GB75YF120UTwww.vishay.comVishay SemiconductorsIGBT Fourpack Module, 75 AFEATURES Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Copper baseplate Low stray inductance design UL approved file E78996 Material categorization: for definitions of compliance ECONO2 4PACK please see www.vishay.com/doc?99912
vs-gb75tp120n.pdf
VS-GB75TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT 2-in 1-Package, 1200 V, 75 AFEATURES High short circuit capability, self limiting to 6 x I 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ