VS-GB90DA60U Todos los transistores

 

VS-GB90DA60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VS-GB90DA60U
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 53 nS
   Qgⓘ - Carga total de la puerta, typ: 460 nC
   Paquete / Cubierta: SOT-227
 

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VS-GB90DA60U Datasheet (PDF)

 ..1. Size:305K  vishay
vs-gb90da60u.pdf pdf_icon

VS-GB90DA60U

VS-GB90DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry st

 5.1. Size:322K  vishay
vs-gb90da120u.pdf pdf_icon

VS-GB90DA60U

VS-GB90DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry standard outline UL appro

 7.1. Size:291K  vishay
vs-gb90sa120u.pdf pdf_icon

VS-GB90DA60U

VS-GB90SA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outlineSOT-227 UL approved file E78996 Material categorization:

 9.1. Size:145K  vishay
vs-gb55la120ux.pdf pdf_icon

VS-GB90DA60U

VS-GB55LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard

Otros transistores... VS-GB75LA60UF , VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , FGL60N100BNTD , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H .

History: 2MBI300VH-120-50

 

 
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History: 2MBI300VH-120-50

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