Справочник IGBT. VS-GB90DA60U

 

VS-GB90DA60U Даташит. Аналоги. Параметры и характеристики.


   Наименование: VS-GB90DA60U
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 53 nS
   Тип корпуса: SOT-227
     - подбор IGBT транзистора по параметрам

 

VS-GB90DA60U Datasheet (PDF)

 ..1. Size:305K  vishay
vs-gb90da60u.pdfpdf_icon

VS-GB90DA60U

VS-GB90DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry st

 5.1. Size:322K  vishay
vs-gb90da120u.pdfpdf_icon

VS-GB90DA60U

VS-GB90DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry standard outline UL appro

 7.1. Size:291K  vishay
vs-gb90sa120u.pdfpdf_icon

VS-GB90DA60U

VS-GB90SA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outlineSOT-227 UL approved file E78996 Material categorization:

 9.1. Size:145K  vishay
vs-gb55la120ux.pdfpdf_icon

VS-GB90DA60U

VS-GB55LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: ART10U120 | NCE40TD135LP | NGD15N41A | 2MBI300NB-060 | IXBF12N300 | NCE75ED120VT4 | NCE25TD120WT

 

 
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