VS-GP100TS60SFPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GP100TS60SFPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 312 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 235 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.16 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 8.8 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 66 nS
Qgⓘ - Carga total de la puerta, typ: 942 nC
Paquete / Cubierta: MODULE
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VS-GP100TS60SFPBF Datasheet (PDF)
vs-gp100ts60sfpbf.pdf
VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin
vs-gp400td60s.pdf
VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending
vs-gp250sa60s.pdf
VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio
vs-gp300td60s.pdf
VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending
Otros transistores... VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , GT30J127 , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G .
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