VS-GP100TS60SFPBF IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GP100TS60SFPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 235 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.16 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 66 nS
Qgⓘ - Total Gate Charge, typ: 942 nC
Package: MODULE
VS-GP100TS60SFPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GP100TS60SFPBF Datasheet (PDF)
vs-gp100ts60sfpbf.pdf
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vs-gp400td60s.pdf
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vs-gp250sa60s.pdf
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vs-gp300td60s.pdf
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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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