All IGBT. VS-GP100TS60SFPBF Datasheet

 

VS-GP100TS60SFPBF Datasheet and Replacement


   Type Designator: VS-GP100TS60SFPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 235 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.16 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 66 nS
   Package: MODULE
 

 VS-GP100TS60SFPBF substitution

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VS-GP100TS60SFPBF Datasheet (PDF)

 0.1. Size:199K  vishay
 vs-gp100ts60sfpbf.pdf pdf_icon

VS-GP100TS60SFPBF

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin

 9.1. Size:154K  vishay
 vs-gp400td60s.pdf pdf_icon

VS-GP100TS60SFPBF

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

 9.2. Size:275K  vishay
 vs-gp250sa60s.pdf pdf_icon

VS-GP100TS60SFPBF

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio

 9.3. Size:158K  vishay
 vs-gp300td60s.pdf pdf_icon

VS-GP100TS60SFPBF

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

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Datasheet: VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , IHW40T60 , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G .

History: STGB19NC60KDT4

Keywords - VS-GP100TS60SFPBF transistor datasheet

 VS-GP100TS60SFPBF cross reference
 VS-GP100TS60SFPBF equivalent finder
 VS-GP100TS60SFPBF lookup
 VS-GP100TS60SFPBF substitution
 VS-GP100TS60SFPBF replacement

 

 
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