HGTP2N120CND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTP2N120CND
Tipo de transistor: IGBT + Diode
Código de marcado: 2N120CND
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 104 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.7(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 30 nC
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
HGTP2N120CND Datasheet (PDF)
hgtp2n120cnd hgt1s2n120cnds.pdf

HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers
hgtp2n120cn hgt1s2n120cn.pdf

March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf

HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at
Otros transistores... HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , SGT50T65FD1PN , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND .
History: MKI100-12F8
History: MKI100-12F8



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