HGTP2N120CND Todos los transistores

 

HGTP2N120CND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTP2N120CND
   Tipo de transistor: IGBT + Diode
   Código de marcado: 2N120CND
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 104 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.7(typ) V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Qgⓘ - Carga total de la puerta, typ: 30 nC
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

HGTP2N120CND Datasheet (PDF)

 ..1. Size:92K  1
hgtp2n120cnd hgt1s2n120cnds.pdf pdf_icon

HGTP2N120CND

HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers

 3.1. Size:498K  1
hgtp2n120cn hgt1s2n120cn.pdf pdf_icon

HGTP2N120CND

March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF

 3.2. Size:89K  1
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf pdf_icon

HGTP2N120CND

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

 5.1. Size:85K  1
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf pdf_icon

HGTP2N120CND

HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

Otros transistores... HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , SGT50T65FD1PN , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND .

History: MKI100-12F8

 

 
Back to Top

 


History: MKI100-12F8

HGTP2N120CND
  HGTP2N120CND
  HGTP2N120CND
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933

 


 
.