HGTP2N120CND Specs and Replacement
Type Designator: HGTP2N120CND
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 104 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 13 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Package: TO220AB
HGTP2N120CND Substitution - IGBT ⓘ Cross-Reference Search
HGTP2N120CND datasheet
hgtp2n120cnd hgt1s2n120cnds.pdf
HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oC The HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC members... See More ⇒
hgtp2n120cn hgt1s2n120cn.pdf
March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description 13A, 1200V, TC = 25 C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150 C the best features of MOSF... See More ⇒
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at ... See More ⇒
hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf
HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT Features The HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oC HGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at ... See More ⇒
Specs: HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , IKW50N60T , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND .
Keywords - HGTP2N120CND transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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