FD1200R17KE3-K Todos los transistores

 ..1. Size:521K  infineon
 fd1200r17ke3-k.pdf

Technische Information / Technical Information IGBT-Module FD1200R17KE3-K IGBT-modules Vorl ufige Daten IGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 1200 A C vj max C nom Continuous DC co

 ..2. Size:473K  infineon
 fd1200r17ke3-k b2.pdf

Technische Information / Technical Information IGBT-Module FD1200R17KE3-K_B2 IGBT-modules Vorl ufige Daten IGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 1200 A C vj max C nom Continuous DC

 5.1. Size:658K  infineon
 fd1200r17hp4-k-b2.pdf

Technische Information / Technical Information IGBT-Modul FD1200R17HP4-K_B2 IGBT-Module IHM-B Modul mit Chopper Konfiguration IHM-B module with chopper configuration V = 1700V CES I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter T

 9.1. Size:1821K  international rectifier
 irfd120pbf.pdf

PD- 95928 IRFD120PbF Lead-Free 10/27/04 Document Number 91128 www.vishay.com 1 IRFD120PbF Document Number 91128 www.vishay.com 2 IRFD120PbF Document Number 91128 www.vishay.com 3 IRFD120PbF Document Number 91128 www.vishay.com 4 IRFD120PbF Document Number 91128 www.vishay.com 5 IRFD120PbF Document Number 91128 www.vishay.com 6 IRFD120PbF Peak Diode Recovery

 9.2. Size:176K  international rectifier
 irfd120.pdf

 9.3. Size:1828K  vishay
 irfd120 sihfd120.pdf

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 9.4. Size:1829K  vishay
 irfd120pbf sihfd120.pdf

IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par

 9.5. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low