FD1200R17KE3-K Todos los transistores

 

FD1200R17KE3-K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FD1200R17KE3-K
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 5950 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Paquete / Cubierta: MODULE

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FD1200R17KE3-K Datasheet (PDF)

 ..1. Size:521K  infineon
fd1200r17ke3-k.pdf

FD1200R17KE3-K
FD1200R17KE3-K

Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-KIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC co

 ..2. Size:473K  infineon
fd1200r17ke3-k b2.pdf

FD1200R17KE3-K
FD1200R17KE3-K

Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-K_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC

 5.1. Size:658K  infineon
fd1200r17hp4-k-b2.pdf

FD1200R17KE3-K
FD1200R17KE3-K

Technische Information / Technical InformationIGBT-ModulFD1200R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter T

 9.1. Size:1821K  international rectifier
irfd120pbf.pdf

FD1200R17KE3-K
FD1200R17KE3-K

PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery

 9.2. Size:176K  international rectifier
irfd120.pdf

FD1200R17KE3-K
FD1200R17KE3-K

 9.3. Size:1828K  vishay
irfd120 sihfd120.pdf

FD1200R17KE3-K
FD1200R17KE3-K

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

 9.4. Size:1829K  vishay
irfd120pbf sihfd120.pdf

FD1200R17KE3-K
FD1200R17KE3-K

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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