FD1200R17KE3-K IGBT. Datasheet pdf. Equivalent
Type Designator: FD1200R17KE3-K
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5950 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 200 nS
Package: MODULE
FD1200R17KE3-K Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD1200R17KE3-K Datasheet (PDF)
fd1200r17ke3-k.pdf
Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-KIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC co
fd1200r17ke3-k b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-K_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC
fd1200r17hp4-k-b2.pdf
Technische Information / Technical InformationIGBT-ModulFD1200R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter T
irfd120pbf.pdf
PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery
irfd120 sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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