FD1200R17KE3-K_B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-KIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC co

Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-K_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC

Technische Information / Technical InformationIGBT-ModulFD1200R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter T

PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par

D120N10ZR/FD120N10ZR/ID120N10ZR/ED120N10ZR120A100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Split Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.3m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Low On Resistance Low