FD1200R17KE3-K_B2 IGBT. Datasheet pdf. Equivalent
Type Designator: FD1200R17KE3-K_B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 6600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 200 nS
Package: MODULE
FD1200R17KE3-K_B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD1200R17KE3-K_B2 Datasheet (PDF)
fd1200r17ke3-k.pdf
Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-KIGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC co
fd1200r17ke3-k b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD1200R17KE3-K_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC
fd1200r17hp4-k-b2.pdf
Technische Information / Technical InformationIGBT-ModulFD1200R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter T
irfd120pbf.pdf
PD- 95928IRFD120PbF Lead-Free10/27/04Document Number: 91128 www.vishay.com1IRFD120PbFDocument Number: 91128 www.vishay.com2IRFD120PbFDocument Number: 91128 www.vishay.com3IRFD120PbFDocument Number: 91128 www.vishay.com4IRFD120PbFDocument Number: 91128 www.vishay.com5IRFD120PbFDocument Number: 91128 www.vishay.com6IRFD120PbFPeak Diode Recovery
irfd120 sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* For Automatic InsertionQg (Max.) (nC) 16COMPLIANT End StackableQgs (nC) 4.4Qgd (nC) 7.7 175 C Operating TemperatureConfiguration Single Fast SwitchingD Ease of Par
Datasheet: FB20R06W1E3 , FB20R06W1E3_B11 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , RJH30E2DPP , FD1400R12IP4D , FD200R12KE3 , FD200R12PT4_B6 , FD250R65KE3-K , FD300R06KE3 , FD300R07PE4_B6 , FD300R12KE3 , FD300R12KS4 .
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