FD800R17KE3_B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FD800R17KE3_B2
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 5200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 160 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de FD800R17KE3_B2 - IGBT
FD800R17KE3_B2 Datasheet (PDF)
fd800r17ke3 b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD800R17KE3_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 800 AC vj max C nomContinuous DC col
fd800r17ke3-b2.pdf
/ Technical InformationIGBT-FD800R17KE3_B2IGBT-modulesIGBT, - / IGBT, Brake-Chopper Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltage T = 80C, T = 150C I 800 AC vj max C nomContinuous DC collector current T = 25
fd800r17kf6c b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD800R17KF6C_B2IGBT-modules1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer Emitter Controlled Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode Vorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated V
fd800r17hp4-k-b2.pdf
Technische Information / Technical InformationIGBT-ModulFD800R17HP4-K_B2IGBT-ModuleIHM-B Modul mit Chopper KonfigurationIHM-B module with chopper configurationV = 1700VCESI = 800A / I = 1600AC nom CRMTypische Anwendungen Typical Applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter High power converters Traktionsumrichter Tra
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2