FD800R17KE3_B2 IGBT. Datasheet pdf. Equivalent
Type Designator: FD800R17KE3_B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 160 nS
Package: MODULE
FD800R17KE3_B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD800R17KE3_B2 Datasheet (PDF)
fd800r17ke3 b2.pdf
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fd800r17ke3-b2.pdf
/ Technical InformationIGBT-FD800R17KE3_B2IGBT-modulesIGBT, - / IGBT, Brake-Chopper Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltage T = 80C, T = 150C I 800 AC vj max C nomContinuous DC collector current T = 25
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