FF1000R17IE4 Todos los transistores

 

FF1000R17IE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF1000R17IE4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

FF1000R17IE4 Datasheet (PDF)

 ..1. Size:677K  infineon
 ff1000r17ie4.pdf pdf_icon

FF1000R17IE4

Technische Information / Technical InformationIGBT-ModuleFF1000R17IE4IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsumrichter High Power Converters Mo

 0.1. Size:620K  infineon
 ff1000r17ie4dp-b2.pdf pdf_icon

FF1000R17IE4

Technische Information / Technical InformationIGBT-ModulFF1000R17IE4DP_B2IGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications Traktionsumrichter Traction drives Windgene

 0.2. Size:681K  infineon
 ff1000r17ie4d-b2.pdf pdf_icon

FF1000R17IE4

Technische Information / Technical InformationIGBT-ModuleFF1000R17IE4D_B2IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsu

 0.3. Size:614K  infineon
 ff1000r17ie4p.pdf pdf_icon

FF1000R17IE4

Technische Information / Technical InformationIGBT-ModulFF1000R17IE4PIGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mo

MOSTRAR MÁS

Otros transistores... FD800R17KE3_B2 , FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 , RJH60F5DPQ-A0 , FF1000R17IE4D_B2 , FF200R06YE3 , FF200R12KE4 , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 .

History: SKM200GBD123D1S | AFGHL40T65SPD | 1MBC05D-060 | IXGC16N60C2 | APT20GF120KR | IXYH24N90C3D1 | MM50G3U120BMX

 

 
Back to Top

 


 
.