FF1000R17IE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FF1000R17IE4
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 6250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1000 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de FF1000R17IE4 - IGBT
FF1000R17IE4 Datasheet (PDF)
ff1000r17ie4.pdf
Technische Information / Technical InformationIGBT-ModuleFF1000R17IE4IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsumrichter High Power Converters Mo
ff1000r17ie4dp-b2.pdf
Technische Information / Technical InformationIGBT-ModulFF1000R17IE4DP_B2IGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications Traktionsumrichter Traction drives Windgene
ff1000r17ie4d-b2.pdf
Technische Information / Technical InformationIGBT-ModuleFF1000R17IE4D_B2IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsu
ff1000r17ie4p.pdf
Technische Information / Technical InformationIGBT-ModulFF1000R17IE4PIGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mo
ff1000r17ie4d b2.pdf
/ Technical InformationIGBT-FF1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2