FF200R06YE3 Todos los transistores

 

FF200R06YE3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FF200R06YE3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 515 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Encapsulados: MODULE

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FF200R06YE3 datasheet

 ..1. Size:707K  infineon
ff200r06ye3.pdf pdf_icon

FF200R06YE3

/ Technical Information IGBT- FF200R06YE3 IGBT-modules IGBT- / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25 C V 600 V vj CES Collector-emitter voltage DC T = 50 C, T = 175 C I 200 A C vj max C nom Co

 6.1. Size:463K  infineon
ff200r06ke3.pdf pdf_icon

FF200R06YE3

Technische Information / Technical Information IGBT-Module FF200R06KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,Inverter H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 600 V vj CES Colle

 8.1. Size:339K  infineon
ff200r33kf2c.pdf pdf_icon

FF200R06YE3

Technische Information / Technical Information IGBT-Modul FF200R33KF2C IGBT-Module Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C 3300 vj V V CES Collector-emitter voltage T = -25 C 3300 vj Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 200 A C vj max C nom Contin

 8.2. Size:630K  infineon
ff200r12ks4.pdf pdf_icon

FF200R06YE3

Technische Information / Technical Information IGBT-Module FF200R12KS4 IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 f r hochfrequentes Schalten 62mm C-Series module with the fast IGBT2 for high-frequency switching V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

Otros transistores... FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 , FF1000R17IE4 , FF1000R17IE4D_B2 , CRG75T60AK3HD , FF200R12KE4 , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , FF200R17KE4 .

 

 

 


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